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. 2019 Jan 17;9:202. doi: 10.1038/s41598-018-36549-z

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) SEM image of an as-grown InAs stem, GaSb core, InAs shell nanowire. (b) and (c) HAADF STEM image of a fabricated VGAA NW GaSb-InAs C-S TFET with GaSb core diameter of 53 nm and InAs shell of 4.5 nm (d) EDX maps of Ga (orange), As (yellow), In (light blue), and Sb (purple). In (c) it is evident the InAs shell is etched in the region above the gate metal by the reduction of the NW diameter. In the EDX spectra, the brighter In and As signals at the edges of the NW also reveal the presence of a shell. The GaAs segment is also evident and is approximately 24 nm long.