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. 2019 Jan 17;9:202. doi: 10.1038/s41598-018-36549-z

Figure 3.

Figure 3

(a) Id − Vg, (b) S − Id, for a C-S TFET device with GaSb diameter of 35 nm, InAs shell thickness approximately 4 nm, and Lg approximately 35 nm. Smin equals 50 mV/dec at Vd = 10 mV.