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. 2019 Jan 17;9:202. doi: 10.1038/s41598-018-36549-z

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) I_d − V_d at 300 K and (b) 10 K for a C-S TFET. Negative differential resistance is visible for negative V_d at 10 K, an indication of band-to-band-tunneling operation in the device. The noise present in the saturation region may be due to discrete trapping events in the high-k and is commonly observed in nanowire FET devices of small dimensions⁸.