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. 2019 Jan 17;9:202. doi: 10.1038/s41598-018-36549-z

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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I_d − V_g at V_d = 10 mV for a different device with the steepest measured subthreshold swing of approximately 40 mV/dec. Hysteresis is also shown and is approximately 10 mV where S = 40 mV/dec. The curve is swept from down to up. Distinct steps are observed which may be attributed to oxide defects as shown for axial TFETs¹⁶. The minimum average swing over one decade in current is degraded from 42 to 56 mV/dec due to the presence of a step.