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. 2019 Jan 17;9:202. doi: 10.1038/s41598-018-36549-z

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) I_d − V_g (linear scale) for V_d = 0.5, 0.3, 0.15, and 0.05 V for a device with the highest measured current drive up to 40 μA/wire and 60 μA/wire for V_d = 0.3 and 0.5 V, respectively. The device has a GaSb core diameter of approximately 50 nm. (b) g_m − V_g, and (c) I_d − V_g (log scale), with S_min = 150 mV/dec. The multiple peaks in g_m are likely due to multiple bound states in the InAs shell, similar to the devices from Dey¹⁵. A thorough analysis of this is beyond the scope of this manuscript.