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. 2019 Jan 17;9:202. doi: 10.1038/s41598-018-36549-z

Figure 8.

Figure 8

(a) Id − Vg versus temperature at Vd = 0.3 V for a C-S TFET device. Off current and subthreshold swing both reduce with reducing temperature. (b) Activation energy extracted from an Arrhenius plot of data in (a) versus gate voltage.