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. 2019 Jan 17;9:202. doi: 10.1038/s41598-018-36549-z

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Measured (solid black), simulated ideal (solid orange) and simulated with traps (dashed black) I_d − V_g at V_d = 0.3 V. For the dashed curve the trap parameters use D_it = 1.4 × 10¹³ cm⁻²eV⁻¹ and σ = 10⁻¹⁴ cm². (b) Energy band diagram perpendicular to the gate in the channel region for a gate bias in the off state. The trap assisted tunneling and thermal emission process is illustrated in red.