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. 2019 Jan 21;10:362. doi: 10.1038/s41467-018-08149-y

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 1 — Unusually large transport mobility in perovskite CaIrO₃. a The crystal structure and b the sketch of Dirac-like dispersion near the line node (blue line). The primitive vectors a, b, and c are defined in the orthorhombic notation with space group Pbnm. c Temperature dependence of the resistivity. The inset is the photograph of single-crystalline CaIrO₃. The red bar denotes the length of 100μm. d The Hall conductivity σ_xy vs. B (B = μ₀H, with μ₀ the vacuum permittivity) at various temperatures. The reciprocal field of peak or dip as indicated by triangles corresponds to the averaged transport mobility μ_tr. e, f show the μ_tr and density (n_3D) of highest mobility carrier as a function of temperature. The temperature dependence of electrical conductivity σ_xx is also shown. g The μ_tr of typical high-mobility oxide semiconductors and metals^{21, 32–40} as well as the heterostructure of (Mg,Zn)O/ZnO⁴¹ and LAO(LaAlO₃)/STO(SrTiO₃)⁴². The carrier densities of heterostructures are derived by assuming the effective channel thickness of 10 nm