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. 2019 Jan 23;8:11. doi: 10.1038/s41377-019-0122-5

Fig. 5. Demonstration of the reduction in dispersion at 4 μm.

Fig. 5

B-scans of a 255-μm-thick silicon wafer using the 1.3 μm (left) and 4 μm (right) OCT systems showing broadening of the A-scan peak from 5 to 18 μm and from 12 to 17 μm, respectively. Note that the peaks at the air–silicon interfaces deviate from the best-case resolution due to spectral apodization. OCT optical coherence tomography