Skip to main content
. Author manuscript; available in PMC: 2019 Oct 23.
Published in final edited form as: ACS Nano. 2018 Sep 28;12(10):10045–10060. doi: 10.1021/acsnano.8b04620

Figure 6.

Figure 6.

Back-gated, two-contact devices fabricated from individual colloidal SnS square nanosheets, (a) Representative SEM image and the resulting room temperature (b) output (IDS-VDS) and (c) transfer (IDS-VGS) characteristics. Although limited current and gate action is observed, n-type ohmic behavior is displayed indicating, unlike nanoribbons, electrons are the majority carrier.