Figure 1.

(a) Copper foil enclosure prior to insertion in the furnace. (b) Schematic of the chemical vapor deposition (CVD) system for graphene on copper. (c) SEM image of graphene on copper grown by CVD. Graphene grown at 1035 °C on Cu at an average growth rate of ~6 μm/min. Reproduced with the permission of Reference [65], Copyright 2011. American Chemical Society (d) Morphology and layer distribution of various few layers graphene segregated from Cu-Ni alloy at 900 °C after transfer to 300 nm SiO₂/Si substrate. Reproduced with the permission of Reference [76]. Copyright 2011, American Chemical Society.