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. 2019 Feb 1;5(2):eaav5749. doi: 10.1126/sciadv.aav5749

Fig. 1. High effective mobility intrinsically stretchable semiconductor of m-CNT–doped P3HT-NFs/PDMS–based rubbery transistors.

Fig. 1

(A) An optical microscopic image of a rubbery transistor. (B) Schematic exploded view of the rubbery transistor structure and schematic illustration of charge carrier transport routes. (C) Schematic fabrication processes of doping the m-CNT by dry transfer and of constructing the rubbery transistor. (D) SEM images of the m-CNT–doped P3HTs-NFs/PDMS semiconducting layer. (E) Transfer characteristics of the devices with different concentrations of the transferred m-CNT. (F) μFE and ION/IOFF of the organic transistors with different concentrations of m-CNT.