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. 2019 Feb 1;10:537. doi: 10.1038/s41467-019-08462-0

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — Polarisation-induced local metallization in SrTiO₃. a The simulation cell. We artificially polarise SrTiO₃ (STO) layers with uniform displacement of Ti atom by 0.2 Å. b Calculated layer-resolved density of states (LDOS) of polarised STO layers (filled blue) compared to that of nonpolar STO (black solid line). Grey regions represent a gap between conduction band minimum and valence band maximum of polarised STO layers, clearly showing a shift of energy bands due to polarisation-induced electric field. Source data are provided as a Source Data file