Table 2.

Substrate material parameters to Formula (18) ($m=9.1\times {10}^{-31}$ kg, the mass of bare electron; lh–light holes, hh–heavy holes, L–longitudinal, T–transverse).

Semiconductor	${\mathit{m}}_{\mathit{n}}^{*}$	${\mathit{m}}_{\mathit{p}}^{*}$	${\mathit{E}}_{\mathit{g}}$
Si	$0.9m$ L[101], $0.19m$ T[110]	$0.16m$ lh, $0.49m$ hh	1.12 eV
GaAs	$0.067m$	$0.08m$ lh, $0.45m$ hh	1.35 eV
CIGS	0.09–0.13 m	$0.72m$	1–1.7 eV