Table 5.

Measured values of the photo-current enhancement in silicon solar cells and silicon photo-diodes with deposited metallic nanoparticles. For various setups and nanoparticles deposition parameters the different increase of the photo-effect efficiency has been observed experimentally as reported in the indicated references. Majority of the observed behavior cannot be explained by only local concentration of the e-m field near the curvature of nanoparticles accounted for by the conventional Comsol modeling and the consistence of the experimental data with the theoretical simulation needs inclusion of the plasmon damping contribution as described in the present paper. However, some exceptionally low efficiency increase (or even decrease) evidences the complicated competition of various factors beyond the model considered in the paper, being apparently sensitive to the position of the p-n junction active layer in the substrate or to the interference destructive effects or reflection from too dense coverings.

Type	Size [nm]	Shape	Concentration	Enhancement	p-n Junction Depth [nm]	Device Type	Ref.
Au	50	spherical	$6.6\times {10}^8$ [cm${}^{-2}$]	18% (max ${}^1$:80%)
Au	80	spherical	$1.6\times {10}^8$ [cm${}^{-2}$]	31% (max ${}^1$:100%)	80	c-Si	[8]
Au	100	spherical	$0.77\times {10}^8$ [cm${}^{-2}$]	38% (max ${}^1$:60%)
Au	100	spherical	$9.9\times {10}^8$ [cm${}^{-2}$]	$2.8$%	500	c-Si ${}^2$	[27]
Au	100	spherical	$0.3\times {10}^8$ [cm${}^{-2}$]	$5.6$%
Au	100	spherical	$1.5\times {10}^8$ [cm${}^{-2}$]	$2.0$%
Au	100	spherical	$3.2\times {10}^8$ [cm${}^{-2}$]	$3.3$%	>500 ${}^3$	mc-Si ${}^4$	[28]
Au	100	spherical	$6.67\times {10}^8$ [cm${}^{-2}$]	$-2.8$%
Au	100	spherical	$10\times {10}^8$ [cm${}^{-2}$]	$-7.5$%
Au	100	spherical	$3.5\times {10}^8$ [cm${}^{-2}$]	$3.3$%	500	c-Si ${}^5$	[29]
Au	diameter 20, height $[2;3]$	island	$1.3\times {10}^{11}$ [cm${}^{-2}$]	20% (max ${}^1$: 40%)	-	a-Si:H/c-S ${}^6$	[13]
Au	diameter 65	spherical	$10·{10}^8$ [cm${}^{-2}$]	18%	300	c-Si ${}^7$	[30]
Ag	40	island	$124\times {10}^8$ [cm${}^{-2}$]	127%	160	SOI ${}^8$
Ag	66	island	$67\times {10}^8$ [cm${}^{-2}$]	283%	160	SO ${}^8$	[31]
Ag	108	island	$25\times {10}^8$ [cm${}^{-2}$]	592%	160	SOI ${}^8$
Ag	thickness 12, 14, 16 ${}^9$	island	-	19%, 14%, 2% ${}^{10}$	-	Si	[32]
Ag	diameter $[120;140]$, height $[45;60]$	island	$30\times {10}^8[$cm${}^{-2}$]	354%	95	SOI ${}^8$	[7]
Ag	thickness 12 and 16 ${}^9$	island	-	33% and 16% ${}^{10}$	1250	SOI ${}^{11}$	[32]
Ag	$25:91$	spheroidal	$38.29$%	17%		c-Si ${}^{12}$
Al	$22:81$	spheroidal	$40.40$%	21%	-	c-Si ${}^{12}$	[35]
In	$17:25$	spheroidal	$30.78$%	23%	-	c-Si ${}^{12}$
Ag	∼60	island	31%	0%	>150 ${}^{13}$	c-Si	[33]
Al	diameter 190, height 70	cylindrical	$19.6$% ${}^{14}$	49%		c-Si ${}^{15}$	[34]

${}^1$ The maximal value of absorption enhancement per single wavelength; ${}^2$ Commercialy available n/p Si solar cell produced by Silicon Solar, Inc.; ${}^3$ Emiter thickness is 500 nm; ${}^4$ Anti-reflection coating from SiN of thickness 70 nm; ${}^5$ N-type Si wafer (001) of thickness 300 mm and donor concentration ca. 1015 cm${}^{-3}$; ${}^6$ Heterojunction a-Si:H/c-Si (p-type, (100)). The thickness of a-Si:H layer is 18 nm; ${}^7$ Si wafer with transparent graphen electrode; ${}^8$ Silicon-on-insulator (SOI); ${}^9$ Nanoparticle coverage was fabricated by annealing of silver film of a particular thickness (12, 14, 16 nm) in the temperature 200 °C by 50 min; ${}^{10}$ Enhancement averaged over the solar spectrum AM1.5G; ${}^{11}$ Silicon-on-insulator (SOI): top Si layer thickness 1250 nm; ${}^{12}$ Solar cell covered by 20 nm layer of TiO${}_2$ separating nanoparticles form silicon; ${}^{13}$ Emiter thickness is 150 nm; ${}^{14}$ periodic, period 380 nm; ${}^{15}$ Solar cell covered by 40 nm layer of SiO${}_2$ separating nanoparticles from silicon.