Skip to main content
. 2019 Jan 9;19(2):224. doi: 10.3390/s19020224

Figure 6.

Figure 6

J–V Characteristics of Pt/a-IGZO Diodes with Different a-IGZO Thicknesses. (a) J–V characteristics of Pt/a-IGZO diodes with a-IGZO thicknesses of 30, 50, and 100 nm, and sputtering process O2: (O2 + Ar) = 1%. (b) J–V characteristics of Pt/a-IGZO diodes with a-IGZO thicknesses of 50, 100, and 150 nm, sputtering process O2: (O2 + Ar) = 4%.