Figure 1.

Overview of the DNN prediction and inverse design process. (a) TE mode is launched into the standard SOI waveguide at the input port of the power splitter (Note that the scales in x- and y-directions are different). (b) Schematic of a nanostructured integrated photonics power splitter with a footprint of 2.6 × 2.6 μm². Circles indicates location of etch holes; by optimizing binary sequence of position of etch holes it is possible to adjust light propagation into either of the ports. (c) We use DNN for forward and inverse modeling of nanophotonic devices. The DNN can take device topology design as input and spectral response of the metadevice as label or vice versa.