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. 2019 Feb 4;9:1331. doi: 10.1038/s41598-018-37663-8

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Experimental and simulated STM images of x = 0.15 before and after annealing. (a) Empty-state scanning tunneling microscopy (STM) image for as-grown single crystal. The defects α and β are related with the Gd substitution. (b,c) Filled- and empty-state STM images after annealing. Notice that the α defects almost disappear, the β defects increase, and the γ defects are newly formed. (d) Schematic diagram of the atomic structure of pristine Bi₂Te₃: top view (upper) and side view (lower). The pink and yellow circles represent Bi and Te atoms, respectively. (e–g) Experimental high-resolution STM images (upper), atomic structures (middle), and simulated constant-current STM images (lower). (e) α defect: Gd_Bi2-Bi_I, (f) β defect: Gd_Bi1, and (g) γ defect: Bi_Te1. The simulated STM images are in good agreement with experiments. The blue circle represents Gd atom. The filled- and empty-state images are measured at V_S = −0.35 and +0.30 V in as-grown sample and V_S = −0.65 and +0.35 V in annealed sample, respectively, and simulated at V_S = −0.6 and +0.6 V, respectively.