Table 3.
EL performances of OLEDs based on DMF‐BP‐PXZ, DPF‐BP‐PXZ, and SBF‐BP‐PXZ
| Emitter | Maximum valuesa) | Values at 1000 cd m−2 | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| V on [V] | ηc [cd A−1] | ηP [lm W−1] | ηext [%] | L [cd m−2] | V [V] | ηC [cd A−1] | ηP [lm W−1) | ηext [%] | RO [%] | CIE [x,y] | |
| Nondoped device I | |||||||||||
| DMF‐BP‐PXZ | 2.7 | 39.9 | 38.0 | 13.3 | 27 331 | 4.9 | 37.4 | 24.0 | 12.5 | 6.0 | (0.440, 0.543) |
| DPF‐BP‐PXZ | 2.6 | 41.6 | 45.0 | 14.3 | 31 422 | 5.0 | 41.4 | 26.0 | 14.1 | 1.4 | (0.458, 0.530) |
| SBF‐BP‐PXZ | 2.5 | 36.8 | 37.9 | 12.3 | 33 990 | 4.0 | 36.7 | 28.8 | 12.2 | 0.8 | (0.456, 0.528) |
| Doped device II | |||||||||||
| DMF‐BP‐PXZ | 2.7 | 60.6 | 55.6 | 18.6 | 53 013 | 4.6 | 58.8 | 42.4 | 18.2 | 2.2 | (0.404, 0.565) |
| DPF‐BP‐PXZ | 2.7 | 62.3 | 59.9 | 19.0 | 77 480 | 4.4 | 61.5 | 43.9 | 18.8 | 1.1 | (0.399, 0.564) |
| SBF‐BP‐PXZ | 2.7 | 62.3 | 62.9 | 19.4 | 113 145 | 4.2 | 61.8 | 46.2 | 19.2 | 1.0 | (0.419, 0.557) |
a)
Abbreviations: V on = turn‐on voltage at 1 cd m−2; ηc = current efficiency; ηp = power efficiency; ηext = external quantum efficiency; L = luminance; RO = external quantum efficiency roll‐off from maximum value to that at 1000 cd m−2; CIE = Commission Internationale de I'Eclairage coordinates. Device I (nondoped OLEDs): ITO/TAPC (25 nm)/DMF‐BP‐PXZ or DPF‐BP‐PXZ or SBF‐BP‐PXZ (35 nm)/TmPyPB (55 nm)/LiF (1 nm)/Al; Device II (doped OLEDs): ITO/TAPC (25 nm)/30 wt% DMF‐BP‐PXZ or 30 wt% DPF‐BP‐PXZ or 30 wt% SBF‐BP‐PXZ : CBP (35 nm)/TmPyPB (55 nm)/LiF (1 nm)/Al.