Table 4.
Exp. | D 3d | C 2h | D 4h | D 2h b | O h c | |
---|---|---|---|---|---|---|
ΔE | 0 (0.00) | 26 (0.31) | 136 (1.63) | 71 (0.85) | 410 (4.92) | |
2.185 | 2.173 | 2.177 | 2.434 | |||
1.947 | 1.971 | 1.969 | 1.761 | |||
g iso d | 2.106 | 2.106 | 2.108 | 2.210 |
aElectronic energies were calculated with DLPNO-CCSD(T)/def2-TZVPP (E in cm−1; kJ mol−1 in parentheses), structures were optimized with TPSSh-D3BJ/def2-TZVPP; the calculated (NEVPT2-SA-CAS-SCF/cc-pVTZ) anisotropic g-tensor components perpendicular () and parallel () to the principal molecular axis as well as isotropic g-values for the minimum structures D3d, C2h and D4h are compared to the experimental values (exp.)
bTransition state structure connecting two equivalent D3d symmetric structures
cNot a stationary point
dgiso = (2*g⊥ + g∥)/3