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. 2019 Feb 7;9:1641. doi: 10.1038/s41598-018-37219-w

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a–c) Large-area 2D MoS₂ layers-based photodetectors integrated on polyester substrates. (a) Image of 2D MoS₂ layers integrated on a flexible polyester substrate with IDEs (schematic in the inset) fabricated on the surface. The zoom-in optical microscopy image (right) shows the array of IDEs (50 μm spacing) on 2D MoS₂ layers. (b) The same device under mechanical bending. (c) I–V characteristics obtained at various illumination intensities. (d–g) Large-area 2D MoS₂ layers-based pressure sensors integrated on paper substrates. (d) Image of a device with metal (gold, Au) contacts under mechanical bending. (e) I–V characteristics obtained with varying pressure levels. (f) I–V characteristics for a pressure sensing of 3 psi with a device before/after slight mechanical bending. This device is different from the one used for (e). (g) Time-current characteristics from a pristine unbent device under a periodic pressure application of 5 psi.