Fig. 4. Field effect transistor (FET). (a) AFM image of a micromechanically exfoliated BP flake which has been rinsed with DI water prior to electrical measurements. (b) SEM image of the rinsed BP flake which has been contacted with a mixture of Ti/Au contacts. The inset shows an optical image of the contacted flake with a labelling of each contact. (c) Electrical characterization: (Left) recorded I–V curve over a span of 50 mV. (Right) 4P conductance measurement.
