Figure 8:

The modulus of the electric field ||E|| corresponding to the current patterns for the intermediate voxel in Figure 5. For the ideal current patterns, the sample noise is not affected by the HPM layer. As sample noise for signal-only optimal current patterns decreases with an increase in thickness of the HPM layer, the corresponding dark mode current patterns required to achieve the UISNR at the voxel of interest have lower amplitude (Fig. 5). A greater amount of electric field is confined within the HPM layer for signal-only current pattern cases with a lower sample noise. Note that the sample noise was normalized by the value associated with the ideal current patterns.