Fig. 3.

The control of sulfur precursor during the patterned growth of monolayer MoS₂ nanostructures. (A) Schematic illustration of the modified CVD setup and the controlled process to synthesize patterned MoS₂ nanostructures. (B) The relationship between the entrance time of the sulfur precursor and the corresponding [S]/[Mo] ratio during the growth. (Insets) OM images of different growth results according to different entrance times of sulfur. (C) The relationship between the locations of the sulfur precursor (d) and the corresponding vapor pressures of sulfur. (Insets) AFM images of MoS₂ patterns grown as a result of different precursor locations. (D) The dependence of nucleation rate as the function of partial pressure of sulfur precursor (left y axis); the dependence of 3D growth rate as the function of partial pressure of sulfur precursor (right y axis). (E) The dependence of surface coverage as the function of partial pressure of sulfur precursor (left y axis); the dependence of 2D growth rate as the function of partial pressure of the sulfur precursor (right y axis).