Fig. 15.

HgTe CQD-based photoconductive devices. a A TEM image of aggregated HgTe CQDs (6 μm absorption cut-offs) that were used to demonstrate photoconductive devices. Inset shows a high-resolution TEM image of a single CQD. b Normalized spectral response of these devices measured at varying temperatures. c The map of the specific detectivity measured as a function of temperature and applied bias

(Figures reproduced from ref. [21] with permission. Copyright 2011 AIP Publishing LLC)