Fig. 20.

HgTe CQD-based p–n heterojunction devices. a A schematic of the device structure. b Current density–voltage characteristics obtained at 85 K under dark, background radiation, and black body (600 °C) illumination. c The spectral photoresponse obtained at 85, 235, and 290 K. d The detectivity plotted as a function of temperature for the current heterojunction device (red) and the first-generation Schottky device (black)

(Figures reproduced from ref. [33] with permission. Copyright 2018 American Chemical Society)