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. 2019 Mar 4;151(3):292–315. doi: 10.1085/jgp.201812213

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© 2019 Tilley et al.

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Figure 7. — GxTx inhibits outward gating-charge movement. (A) I_{g ON} elicited during voltage steps to the indicated potential from a holding potential of −100 mV. Black, vehicle; red, 1 µM GxTx; dotted lines, zero current level. (B) I_{g OFF} elicited during voltage steps to −140 mV following a 100-ms step to the potential indicated in A. (C) Integrals of control I_{g OFF} current following a 100-ms step to the indicated potential from individual cells (n = 3–4). (D) Integrals of 1 µM GxTx I_{g OFF} current following a 100-ms step to the indicated potential from individual cells (n = 3–4). Symbols mark same cells as in C. (E) Mean Q_OFF from C and D. Lines are fits of Eq. 5. Black, control; V_1/2 = −26 ± 1 mV, z = 1.6 ± 0.1 e₀; red, 1 µM GxTx V_1/2 = 47 ± 1 mV, z = 1.4 ± 0.1 e₀. (F) Integrals of I_{g ON} during the first 10 ms of a step normalized to the integral of I_{g OFF} to the indicated potential (n = 3–4). Lines are fits of Eq. 5. Black, control; V_1/2 = −12 ± 3 mV, z = 1.6 ± 0.1 e₀, A = 0.55 ± 0.02; red, 1 µM GxTx V_1/2 = 74 ± 6 mV, z = 1.1 ± 0.1 e₀, A = 0.39 ± 0.03.