Table 1.

Material characterization results for green LEDs on LT-GaN and sputtered AlN/sapphire templates.

Sample	Lattice constant c	In-plane compressive strain (XRD)	In-plane compressive stress (XRD)	In-plane compressive stress (Raman)
Green LED with LT-GaN NL (19 nm)	5.189500 Å	0.171%	819 MPa	576 MPa
Green LED with sputtered AlN NL (19 nm)	5.190320 Å	0.202%	968 MPa	831 MPa
Green LED with sputtered AlN NL (26 nm)	5.189862 Å	0.185%	885 MPa	671 MPa
Green LED with sputtered AlN NL (33 nm)	5.189186 Å	0.159%	762MPa	483 MPa
Green LED with sputtered AlN NL (40 nm)	5.189316 Å	0.164%	786 MPa	519 MPa