Table 1.
Atomic number | Applied electric field (V μm−1) | μτ product (cm2 V−1) | Sensitivity (μC Gy−1air cm−2) | Spatial resolution (lp mm−1) | Lowest detectable dose rate (μGyair s−1) | Refs | |
---|---|---|---|---|---|---|---|
Sia | 14 | 0.5 | >1 | 8 | 4.5 | <8300 | 24, 26 |
a-Sea | 34 | 10 | 10−7 | 20 | ~15 | 5.5 | 21, 70 |
HgI2a | 53,80 | 10 | 10−4 | 1600 | 3.93 | 10 | 84 |
CZTa | 48, 52 | 0.1–1 | 0.01 | 318 | 10 | 50 | 85, 86 |
MAPbBr3a | 35, 82 | 0.05 | 0.012 | 2.1 × 104 | 10 | 0.039 | 18, 66 |
MAPbI3a | 53, 82 | 0.24 | 0.010 | 1.1 × 104 | 3 | <5000 | 64 |
Cs2AgBiBr6a | 47, 53, 55, 83 | 0.025 | 0.0060 | 105 | — | 0.060 | 47 |
CsI(Tl)b | 53, 55, 81 | — | — | 5370 | 10 | 0.18 | 27, 28 |
GOS(Tb)b | 64, 65 | — | — | 7.3 | 4.75 | — | 29 |
aThe direct X-ray detection by semiconductor
bThe indirect X-ray detection by scintillator