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. 2019 Mar 7;14:83. doi: 10.1186/s11671-019-2915-0

Table 1.

RPALD HfO2 deposition parameters

RPALD- HfO2 thin film
Parameter Value
Substrate temperature (°C) 250
TEMAH pulse time (s) 1.6
O2 plasma pulse time (s) 10
O2 plasma power (W) 2500
Thickness (nm) 15
RTA-post annealing process
Parameter Value
Temperature (°C) 400–600
Time (min) 20
Ambient N2