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. 2019 Mar 8;10:1119. doi: 10.1038/s41467-019-09119-8

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 5 — TLM analysis of bottom-contact and top-contact DPh-DNTT TFTs fabricated on flexible PEN substrates. The TFTs have a gate-dielectric thickness of 5.3 nm, channel lengths ranging from 8 to 60 µm, and a channel width of 200 µm. a, b Linear fits to the total width-normalized resistance (RW) at selected gate-overdrive voltages (V_GS−V_th). c Width-normalized contact resistance (R_CW) plotted as a function of the gate-overdrive voltage. The error bars correspond to the standard error from the linear regression at each gate-overdrive voltage. d Intrinsic channel mobility (µ₀) plotted as a function of the gate-overdrive voltage