Table 1.

Summary of the results of the TLM measurements performed on top-contact and bottom-contact DPh-DNTT TFTs fabricated on flexible PEN substrates

Device architecture	RCW (Ωcm) at VGS−Vth = −2.5 V	LT (µm) at VGS−Vth = −2.5 V	µ0 (cm2 V−1 s−1)	L1/2 (µm)
TC	56 ± 14	2.4 ± 0.6	5.7 ± 0.1	4.3 ± 0.2
BC	29 ± 13	1.1 ± 0.5	4.9 ± 0.1	2.6 ± 0.2

The intrinsic channel mobility (µ₀) and the channel length at which the effective carrier mobility is half the intrinsic channel mobility (L_1/2) were extracted from the fits in Supplementary Figure 2c