Skip to main content
. 2019 Jan 30;9(2):169. doi: 10.3390/nano9020169

Table 1.

Summary of the electrical characterization of the produced fully printed ZnO NP EGTs: channel width and length ratio (W/L), the drain voltage (VDS), the turn on voltage (Von), the on-off current ratio (Ion/Ioff), the subthreshold swing (SS), the transconductance (gm), and the saturation mobility (µSat).

Device Designation W/L VDS
(V)
Von
(V)
Ion/Ioff SS
(V dec−1)
gm
(S)
µSat
(cm2 (Vs)−1)
ZnO10350 °C G EGT 120 1.2 1.50 2.00 × 103 0.08 2.58 × 10−6 0.02
ZnO40150 °C G EGT 120 1.1 2.20 1.55 × 103 0.11 3.55 × 10−6 0.02
ZnO40350 °C G EGT 120 0.9 0.90 8.74 × 103 0.06 8.44 × 10−4 5.73
ZnO40150 °C PP EGT 120 1.0 2.10 1.73 × 103 0.01 1.41 × 10−6 0.01
ZnO40150 °C MK EGT 120 1.3 1.90 3.72 × 103 0.21 1.08 × 10−5 0.07