Figure 25.

(a) Energy diagram of a semiconductor/G Schottky junction solar cell under illumination. Ø_G and Ø_S are the work functions of graphene and the semiconductor, respectively. eV_i is the built-in potential, V is the output voltage, E_C, E_V, and E_F correspond to the conduction band edge, valence band edge, and Fermi level of semiconductor, respectively, and E₀ is the vacuum level. (b) Schematic illustration of G-based Schottky junction solar cell. Photogenerated holes (h+) and electrons (e−) are driven towards the G and semiconductor layers, respectively. Taken from [146].