Table 3.
Performance of relevant e-skin sensors reported so far. Abbreviations: NA—not available; TCR—temperature coefficient of resistance.
| Reference | Transduction Mechanism | Micro-Structuration Process and Shape | Pressure Sensitivity and Range | Maximum Pressure Tested | Relaxation Time | Number of Pressure Cycles | TCR and Range |
|---|---|---|---|---|---|---|---|
| [5] | Capacity | - | 5 × 10−4 kPa−1 (<1 MPa) | 1 MPa | NA | NA | - |
| [6] | Capacity | Photolitography Pyramids |
8.4 kPa−1 (<8 kPa) 0.38 kPa−1 (>30 kPa) |
~60 kPa | 10 ms | 15,000 | - |
| [10] | Capacity | Photolitography Fibers |
0.58 kPa−1 (<0.5 kPa) | 10 kPa | 30 ms | 3000 | - |
| [29] | Capacity | - | 2.3 × 10−4 kPa-1 (<0.8 MPa) | 800 kPa | NA | NA | - |
| [44] | Capacity | - | (3.4–5) × 10−2 kPa−1 (<0.1 kPa) 5 × 10−4 kPa−1 (10 kPa–25 kPa) |
25 kPa | NA | 2000 | ~ 0.2%/°C (25–50 °C) |
| [34] | Triboelectricity | Photolitography Pyramids |
0.31 kPa−1 (<3 kPa) 1 × 10−2 kPa−1 (3 kPa–13 kPa) |
90 kPa | 5 ms | 30,000 | - |
| [9] | Piezoresistivity | Photolitography Domes |
−15.1 kPa−1 (<0.5 kPa) | 59 kPa | 40 ms | 1000 | - |
| [26] | Piezoresistivity | Photolitography Domes |
14 kPa−1 (<5 kPa) 3.2 kPa-1 (5 kPa–10 kPa) |
12 kPa | 30 ms | 10,000 | - |
| [37] | Piezoresistivity | Photolitography Pyramids |
2.5 kPa−1 (<250 Pa) | 5 kPa | 20 ms | 100,000 | 0.32%/°C (40–43 °C) |
| [42] | Piezoresistivity | Using nylon as mold Cubic-like structures |
56.36 kPa−1 (<1 kPa) 2.51 kPa−1 (1 kPa–10 kPa) |
10 kPa | 300 ms | 25,000 | - |
| [43] | Piezoresistivity | Photolitography Domes |
NA | 49.5 kPa | NA | 5000 | 2.93%/°C (20–40 °C) |
| [45] | Piezoresistivity | Stretching Wrinfles |
NA | NA | NA | 300 | 2.38%/°C (30–65 °C) |
| This work | Piezoresistivity | Laser engraving Domes |
−(1.8–6.4) × 10−1 kPa−1 (<400 Pa) −(2.3–6.4) × 10−3 kPa−1 (1.2 kPa–100 kPa) |
100 kPa | (28 ± 7) ms | 27,500 | 8.3%/°C (25–45 °C) |