Table 4.

Parameters used simulation for GaInP, GaAs, Si, and InGaAs subcells.

Parameters	GaInP	GaAs	InGaAs	Si
Band gap (eV)	1.9	1.424	0.74	1.1
Electron affinity (eV)	4.16	4.07	4.49	1.05
Relative permittivity	11.6	13.2	12.5	11.9
CB effective density of state (cm−3)	1.3 × 1020	4 × 1017	2.1 × 1017	2.8 × 1019
VB effective density of state (cm−3)	1.28 × 1019	9 × 1018	7.7 × 1018	1.04 × 1019
Electron mobility (cm2/Vs)	500	3197	12260	1500
Hole mobility (cm2/Vs)	30	232	300	450
Radiative recombination coefficient (cm3/s)	5 × 10−9	1.3 × 10−10	1.43 × 10−10	1.8 × 10−15
Auger electron capture coefficient (cm6/s)	—	5 × 10−31	8.1 × 10−29	3 × 10−31
Auger hole capture coefficient (cm6/s)	—	5 × 10−31	8.1 × 10−29	3 × 10–31
SRH τn (ns)	—	9 × 102	2 × 104	4.3 × 103
SRH τp (ns)	—	9 × 102	2 × 104	6.1 × 103