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Electrical properties of solar cells with various device structures obtained from simulation and experiment.
| Jsc (mA)/cm2 | Voc (V) | |
|---|---|---|
| GaInP (simulation) | 13.78 | 1.3 |
| GaAs (simulation) | 11.63 | 1.03 |
| Si (simulation) | 10.17 | 0.56 |
| InGaAs (simulation) | 25.38 | 0.39 |
| GaInP/GaAs//InGaAs Triple- junction (simulation) | 11.63 | 2.72 |
| GaInP/GaAs//Si Triple- junction (simulation) | 10.17 | 2.89 |
| GaInP/GaAs//InGaAs Triple- junction (experiment) | 13.66 | 2.52 |
| GaInP/GaAs//Si Triple- junction (experiment) | 13.37 | 2.71 |
