Fig. 4.

Advantages of SGTs for oxide materials. (A) SEM images of channel length of three short-channel SGTs. (B–D) Output curves for short-channel Schottky contact transistors with channel lengths of 1,640 nm (B), 602 nm (C), and 360 nm (D). None of the devices are affected by short-channel effects. (E) Transfer curves showing the device behavior under NBITS for 20 h. The device was exposed to heating at 60 °C and a 2,000-lx white LED, and it was biased at $V_G=-20$ V. (F) Output curves for a TFT with an ITO channel. (G) Output curves for an SGT with an ITO channel. Short-channel SGTs devices have source lengths $=200$ $\mathrm{\mu }$m; all other SGTs have source lengths $=1.2$ mm and channel lengths $=60$ $\mathrm{\mu }$m.