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. 2019 Jan 11;6(6):1801445. doi: 10.1002/advs.201801445

Table 1.

Summary of recent progress on inkjet‐printed SWCNT field‐effect transistors

Ink material Solvent Substrate S/D contact Dielectric Semiconductor Key electrical characteristics of TFT Application Ref.
SWCNT Toluene HfO2/n‐doped Si, SiO2/Mo Glass Ag HfO2, SiO2 SWCNT p‐type

  • = 10–30 cm2 V−1 s−1

  • log(I On/I Off) = 6–7

n‐type

  • = 10–30 cm2 V−1 s−1

  • log(I On/I Off) = 6

 Inverter

  • Noise margin = 103% @ 1/2 Vdd

  • Voltage gain = 30

  • Low static power consumption = 0.1 µW @ Vdd = 1 V

 151
SWCNT Toluene (with P‐DPPb5T) HfO2/n‐doped Si Au HfO2 SWCNT

  • = 33.2 cm2 V−1 s−1

  • log(I On/I Off) ≈ 7

 Inverter

  • Noise margin = 74 % @ 1/2 Vdd

  • Voltage gain = 16 @ 1 V

 152
SWCNT Toluene PTS coated SiO2 Ti/Pd SiO2 SWCNT w/alignment

  • ≈ 1 cm2 V−1 s−1

  • log(I On/I Off) ≈ 2–3

w/o alignment

  • ≈ 0.1 cm2 V−1 s−1

  • log(I On/I Off) ≈ 5

 156
SWCNT 1‐cyclohexyl‐2‐pyrrolidone Glass Ag Al2O3 SWCNT p‐type(acetone exposure)

  • = 7.3 ± 1.8 cm2 V−1 s−1

  • log(I On/I Off) = 2.36 ± 0.25

n‐type(ambipolar)

  • = 2.4 ± 0.4 cm2 V−1 s−1

  • log(I On /I Off) = 2.27± 0.23

 Inverter

  • Voltage gain = 12

Ring oscillator

  • Frequency = 2.91 kHz

 159
SWCNT or P3‐mSWCNT Toluene (sSWCNT)
DI(P3‐mSWCNT)		 SiO2 Ag, Au, mSWCNT SiO2 SWCNT

  • = 6.7 cm2 V−1 s−1

  • intrinsic = 3.4 cm2 V−1 s−1

  • log(I On /I Off) ≈ 6

 Electrode

  • Rc = 16.8 kΩ µm

  • Rs = 390 Ω/sq

 160
SWCNT or P3‐SWCNT DI water with Triton X‐100 Polydimethylsiloxane (PDMS) P3‐SWCNT High‐k barium titanate nanoparticles / PDMS SWCNT

  • = 7 cm2 V−1 s−1

  • log(I On /I Off) ≈ 3–4

 Electrode

  • Rs > 100 kΩ

Inverter

  • Voltage gain > 0.5

 162
sSWCNT 99% SWCNT solution (NanoIntegris, Inc.) PET Ag High‐k barium titanate nanoparticles / poly(methyl methacrylate) sSWCNT

  • = 4.27 ± 1.62 cm2 V−1 s−1

  • log(I On /I Off) = 4.55 ± 0.87

 241