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. 2019 Mar 21;9:4983. doi: 10.1038/s41598-019-41579-2

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© The Author(s) 2019

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Morphology and electric field distribution of deep V-pits covered by ITO nanowire networks. (a) Single hole was covered by ITO nanowire networks completely. (b) All the inner-wall of the hole was covered by ITO nanowire networks, and the insert is the large image of bottom area. (c) The AFM image (measured by Contact Topography Mode) and (d) the electric field distribution of V-pits covered by nanowires were measured by SNOM through applying 10 V to the probe tip.