Table 1 |. A summary of individual photo-responses from 16 selected Si structures.

A p-i-n diode junction promotes the capacitive current (Red) over a uniformly doped p-type Si. Metal decorations on the p-i-n membrane surface further enhance the capacitive current (Red), and more importantly, increase the proportion of Faradaic component (Green). Laser illumination on Si materials with smaller dimensions yields stronger photothermal responses (Blue). The LED illumination condition: ~ 12.05 mW, ~ 500 μm spot size, ~ 6 W/cm²; the laser illumination condition: ~ 47.1 mW, ~ 5 μm spot size, ~ 240 kW/cm². Pipette-Si distance ~ 2 µm.