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. Author manuscript; available in PMC: 2019 Oct 1.
Published in final edited form as: IEEE Sens J. 2018 Aug 6;18(19):7899–7906. doi: 10.1109/JSEN.2018.2863644

Fig. 5.

Fig. 5.

Post-CMOS pocess flow for on-chip RTIL-based sensor fabrication: Photoresist is spin-coated (a) and developed (b). Titanium and gold is deposited by PVD (c). Photoresist is then rinsed off to leave the electrode (d). CMOS chip with on-chip electrode is wire bonded to package (e). A droplet of RTIL is casted on the electrodes (f).