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. 2019 Mar 29;9:5368. doi: 10.1038/s41598-019-41859-x

Figure 2.

Figure 2

Structure of unitcell. (a) The overview of unitcell, nanocuboid GST is settled on ITO conductive layer and substrate SiO2, periodic p = 0.7 μm, GST height h = 0.7 μm, length l = 0.35 μm, width w = 0.1 μm. ITO film thickness T = 0.03 μm. The insert is the side view of the unitcell. (b) The overlook of the unitcell, the orientation direction of structure have an angle θ with x axis.