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. 2016 Aug 26;2:16037. doi: 10.1038/micronano.2016.37

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Copyright © 2016 © 2016 Institute of Electronics, Chinese Academy of Sciences

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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An SEM image of a 300 μm by 300 μm microheater, dotted with microparticles of the TL material Mg₂SiO₄. The heater comprises a 160 nm Pt resistor on a 200 nm LPCVD low-stress silicon nitride platform; a cap layer of PECVD nitride protects the resistor’s Cr adhesion layer from attack during the KOH platform release etch. The scuffing visible on the gold contact pad at bottom is from the use of a microprobe to make electrical contact during testing²⁴. TL, thermoluminescence.