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. 2016 Sep 12;2:16045. doi: 10.1038/micronano.2016.45

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Copyright © 2016 The Author(s)

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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(a) Process overview of RIE etching of PDMS using an LOR/SU8 etching mask. (b) Tilted SEM pictures (40°) of the smallest features produced by this RIE etching process with a top edge length of 1.5 μm (arrow) showing slanted sidewalls. (c) Tilted SEM pictures (40°) of features produced using this RIE etching process, showing the need for sufficient spacing between features because of the slanted sidewalls. RIE, reactive ion etching; SEM, scanning electron microscopy.