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. 2016 Apr 25;2:16015. doi: 10.1038/micronano.2016.15

Figure 4.

Figure 4

SED distribution of the second elliptical in-plane mode of a center-supported disk BAW resonator in (100) SCS. The anisotropic nature of the material causes a directionally dependent shear stress in the resonator−substrate boundary that is different for the two modes. (Red regions indicate where the SED is maximum; blue regions indicate where the SED is minimum.) BAW, bulk-acoustic wave; SCS, single-crystal silicon; SD, substrate-decoupled; SED, strain energy density.