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. 2016 Apr 25;2:16015. doi: 10.1038/micronano.2016.15

Figure 5.

Figure 5

SED distribution for the second elliptical in-plane mode of the presented SD-BAW implemented in (100) SCS. The stress isolation system effectively attenuates the strain induced on the center support, minimizing anchor loss. BAW, bulk-acoustic wave; SCS, single-crystal silicon; SD, substrate-decoupled; SED, strain energy density.