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. 2016 Apr 25;2:16015. doi: 10.1038/micronano.2016.15

Figure 7.

Figure 7

SEM view of the SD-BAW gyroscope (a), and close-up view of the 270 nm capacitive gap implemented with the HARPSS™ process (b). BAW, bulk-acoustic wave; HARPSS, high aspect-ratio combined poly and single-crystal silicon; SD, substrate-decoupled.