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. 2016 Apr 25;2:16015. doi: 10.1038/micronano.2016.15

Figure 8.

Figure 8

Modified process flow for the creation of SD-BAW Z-axis gyroscopes in conjunction with planar X/Y gyros and tri-axial accelerometers. (a) Structure is defined in SOI substrate via DRIE. (b) Capacitive gaps are defined by thermal oxidation, and trenches are refilled with polysilicon or TEOS to create electrodes. (c) Structure is released, and (d) device wafer is capped at a pressure of 1 to 10 Torr. BAW, bulk-acoustic wave; SD, substrate-decoupled.