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. 2017 Sep 11;3:17053. doi: 10.1038/micronano.2017.53

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Copyright © 2017 The Author(s)

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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Charge memory characteristics of the FETs made from MoS₂ flakes: (a) and (b) show the HRTEM images of the cleaved surfaces of one MoS₂ flake of critical thickness (or critical aspect ratio) and the other flake, which is thicker than the critical thickness, respectively; (c) schematic illustration of a back-gated MoS₂ FET; (d and e) show the optical micrographs of the FETs made from the MoS₂ flakes shown in (a and b), respectively; (f and g) display I_DS—V_G curves measured from these two FETs, respectively; (h and i) display the I_DS—t curves measured from the FETs made from the MoS₂ flakes shown in (a and b), respectively, which are modulated by a set of periodic −50 V, 100 ms V_G pulses.